Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas Gisela mit ihren Angeboten deutlich unter

mit ihren Angeboten deutlich unter dem deutschen Marktpreis liegen

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between 1 and 3 April 1985

Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas Gisela mit ihren Angeboten deutlich unterTerahertz science and technology is attracting great interest due to its application in a wide array of fields made possible by the development of new and improved terahertz radiation sources and detectors. This book focuses on the development and characterization of one such source namely the semi large aperture photoconducting (PC) antenna fabricated on Fe doped bulk Ga0. 69In0. 31As substrate. The high ultrafast carrier mobility, high resistivity,